cmst3410 npn cmst7410 pnp surface mount complementary low v ce(sat) silicon transistors description: the central semiconductor cmst3410, cmst7410 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a supermini? surface mount package, designed for battery driven, handheld devices requiring high current and low v ce(sat) voltages. marking codes: cmst3410: c03 cmst7410: c07 sot-323 case maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 40 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 6.0 v continuous collector current i c 1.0 a peak collector current i cm 1.5 a power dissipation p d 275 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 455 c/w electrical characteristics: (t a =25c unless otherwise noted) npn pnp symbol test conditions min typ typ max units i cbo v cb =40v 100 na i ebo v eb =6.0v 100 na bv cbo i c =100a 40 v bv ceo i c =10ma 25 v bv ebo i e =100a 6.0 v v ce(sat) i c =50ma, i b =5.0ma 25 30 50 mv v ce(sat) i c =100ma, i b =10ma 40 50 75 mv v ce(sat) i c =200ma, i b =20ma 80 95 150 mv v ce(sat) i c =500ma, i b =50ma 190 205 250 mv v ce(sat) i c =800ma, i b =80ma 290 320 400 mv v ce(sat) i c =1.0a, i b =100ma 360 400 450 mv v be(sat) i c =800ma, i b =80ma 1.1 v v be(on) v ce =1.0v, i c =10ma 0.9 v h fe v ce =1.0v, i c =10ma 100 h fe v ce =1.0v, i c =100ma 100 300 h fe v ce =1.0v, i c =500ma 100 h fe v ce =1.0v, i c =1.0a 50 f t v ce =10v, i c =50ma, f=100mhz 100 mhz c ob v cb =10v, i e =0, f=1.0mhz (cmst3410) 6.0 10 pf c ob v cb =10v, i e =0, f=1.0mhz (cmst7410) 10 15 pf r2 (1-august 2011) www.centralsemi.com
cmst3410 npn cmst7410 pnp surface mount complementary low v ce(sat) silicon transistors lead code: 1) base 2) emitter 3) collector marking code: c03 cmst3410 npn sot-323 case - mechanical outline pin configurations lead code: 1) base 2) emitter 3) collector marking code: c07 cmst7410 pnp www.centralsemi.com r2 (1-august 2011)
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